Proceedings of the Estonian Academy of Sciences, Physics and Mathematics |
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Aarik adsorbed adsorption ALD process amorphous annealing atomic layer deposition atomic layer epitaxy B-rich band gap band-gap energies boron nitride buffer layers chlorine CIGS composition crystalline cubic phases cycles devices diamond 111 dioxide edge electron emission Estonian exchange chemical reaction excitonic film thickness films deposited gate dielectrics Godlewski grown at 500 grown by atomic growth rate growth species growth temperature hexagonal HfO2 and ZrO2 HfO2 films impurities interface kilede kJ/mol Larsson laser damage thresholds layer deposition ALD materials monoclinic monoclinic phase Niinisto nucleation observed obtained optical coatings oxygen parameter peak Photon energy Phys precursor precursor chemistries properties refractive index rutile sample sapphire substrates silica silicon substrate SiO2 solar cells structure substrate sulphur Suntola Tallinn Tartu tetragonal Thin Solid Films Ti02 films TiO2 University of Tartu valence band vapour X-ray diffraction zinc ZnO films ZnS and Zn(O,S